CV-SiC-1200-80 1200 V 80 mΩ MOSFET
Higher Rds(on) 1200 V device for lower-power isolated converters where switching loss dominates conduction loss.
Higher Rds(on) 1200 V device for lower-power isolated converters where switching loss dominates conduction loss.
Quality note: Specified to meet applicable industry standards. Bureau Veritas certified quality system. Shorter lead-time builds available on qualified demand.
The PDF is the public evaluation brief (specs, pin map, package sketch). The revision-controlled datasheet with SOA curves, land pattern and PPAP pack is issued after an RFQ.
Key specifications
| Vds | 1200 V |
|---|---|
| Rds(on) typ | 80 mΩ |
| Package | TO-247-3 |
| Tj max | 175 °C |
Typical applications
- Auxiliary DC-DC
- Isolated industrial supplies
Use-case examples are typical, not a substitute for your design review, SOA analysis, and qualification plan.
Package outline sketch
Reference drawing for layout planning. Use the product brief PDF for notes and the controlled datasheet for the land pattern released to your program.
